The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jun. 13, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ching-Hui Lin, Taichung, TW;

Chun-Ren Cheng, Hsinchu, TW;

Shih-Fen Huang, Jhubei, TW;

Fu-Chun Huang, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06V 40/13 (2022.01); G01N 27/414 (2006.01); H10D 30/01 (2025.01); H10N 30/30 (2023.01);
U.S. Cl.
CPC ...
G06V 40/1306 (2022.01); G01N 27/4145 (2013.01); H10D 30/015 (2025.01); H10N 30/302 (2023.02);
Abstract

The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.


Find Patent Forward Citations

Loading…