The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Jun. 11, 2020
Applicant:

Enkris Semiconductor, Inc., Jiangsu, CN;

Inventors:

Dandan Zhu, Jiangsu, CN;

Liyang Zhang, Jiangsu, CN;

Kai Cheng, Jiangsu, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10H 20/01 (2025.01); H10H 20/81 (2025.01); H10H 20/816 (2025.01); H10H 20/84 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8215 (2025.01); H10H 20/01 (2025.01); H10H 20/8162 (2025.01); H10H 20/84 (2025.01); H10H 20/01335 (2025.01); H10H 20/0137 (2025.01); H10H 20/034 (2025.01); H10H 20/825 (2025.01);
Abstract

This application provides semiconductor structures and methods of manufacturing the same. A semiconductor structure includes: an N-type semiconductor layer, a light emitting layer, and a P-type ion doped layer that are disposed from bottom to up, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, P-type doping ions in the activated region are activated, and P-type doping ions in the non-activated region are passivated. The layout of the activated region and the non-activated regions makes an LED include: a high-efficiency light emitting region and light emitting obstacle regions located on two sides of the high-efficiency light emitting region.


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