The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Jan. 31, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien-Hsuan Liu, Tainan, TW;

Chiang-Ming Chuang, Changhua, TW;

Chih-Ming Lee, Tainan, TW;

Kun-Tsang Chuang, Miaoli County, TW;

Hung-Che Liao, Tainan, TW;

Chia-Ming Pan, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/68 (2025.01); H01L 21/3213 (2006.01); H10B 41/10 (2023.01); H10B 41/30 (2023.01); H10B 41/42 (2023.01); H10B 41/47 (2023.01); H10D 30/01 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H01L 21/32135 (2013.01); H10B 41/10 (2023.02); H10B 41/42 (2023.02); H10B 41/47 (2023.02); H10D 30/0411 (2025.01); H10D 30/683 (2025.01); H10D 30/6892 (2025.01); H10D 64/035 (2025.01);
Abstract

A semiconductor device includes a stacked gate structure, a plurality of stacks and a first conductive layer. The stacks are disposed aside the stacked gate structure and arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction. The first conductive layer is disposed between segmented portions of the stacks along the second direction, wherein top surfaces of the segmented portions of the stacks are higher than a top surface of the first conductive layer.


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