The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Jan. 09, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming-Fa Chen, Taichung, TW;

Sung-Feng Yeh, Taipei, TW;

Tzuan-Horng Liu, Taoyuan, TW;

Chao-Wen Shih, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01);
Abstract

A semiconductor structure includes a first semiconductor substrate, a first interconnect structure disposed below the first semiconductor substrate, a through substrate via (TSV) penetrating through the first semiconductor substrate and extending into the first interconnect structure, and a first bonding conductor disposed below the first interconnect structure and electrically coupled to the TSV through the first interconnect structure. The TSV includes a first surface in the first interconnect structure and a second surface opposite to the first surface, and the first bonding conductor includes a first bonding surface facing away the first interconnect structure. In a view, a boundary of the first bonding surface of the first bonding conductor overlaps a boundary of the first surface of the TSV.


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