The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jan. 23, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Kensaku Narushima, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2025.01); C23C 16/16 (2006.01); C23C 16/18 (2006.01); C23C 16/56 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); C23C 16/16 (2013.01); C23C 16/18 (2013.01); C23C 16/56 (2013.01); H01L 21/28568 (2013.01); H01L 23/53257 (2013.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H01L 23/5226 (2013.01);
Abstract
A method of forming a ruthenium silicide film on a surface of a substrate includes: forming a ruthenium film to cover a diffusion layer by supplying a gas containing a ruthenium compound to the surface of the substrate where the diffusion layer is exposed; and forming the ruthenium silicide film including RuSiby siliciding the ruthenium film by supplying a gas containing a silicon compound to the substrate while heating the substrate to a temperature within a range of 420 degrees C. or higher and lower than 500 degrees C.