The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jul. 02, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Chen Kuo, Taichung, TW;
Chih-Cheng Liu, Hsinchu, TW;
Ming-Hui Weng, New Taipei, TW;
Jia-Lin Wei, Hsinchu, TW;
Yen-Yu Chen, Taipei, TW;
Jr-Hung Li, Chupei, TW;
Yahru Cheng, Taipei, TW;
Chi-Ming Yang, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Ching-Yu Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.