The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Oct. 03, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hong-Yan Chen, San Jose, CA (US);

Ching-Huang Lu, Fremont, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/32 (2013.01);
Abstract

Control logic in a memory device causes a program voltage to be applied to a selected data wordline of a plurality of wordlines of a block of a memory array for a pulse duration period during a programming operation. The control logic further causes a first pass voltage to be applied to one or more unselected data wordlines of the plurality of wordlines of the block for the pulse duration period and causes a second pass voltage to be applied to a last unselected data wordline of the plurality of wordlines of the block for at least a first portion of the pulse duration period, wherein the second pass voltage has a lower magnitude than the first pass voltage.


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