The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jun. 08, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Leonid Dorf, San Jose, CA (US);

James Hugh Rogers, Los Gatos, CA (US);

Olivier Luere, Sunnyvale, CA (US);

Travis Koh, Sunnyvale, CA (US);

Rajinder Dhindsa, Pleasanton, CA (US);

Sunil Srinivasan, Milpitas, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32706 (2013.01); H01J 37/32146 (2013.01); H01J 37/32715 (2013.01); H01J 37/32935 (2013.01); H01J 37/3299 (2013.01); H01J 2237/334 (2013.01);
Abstract

Systems and methods for controlling a voltage waveform at a substrate during plasma processing include applying a shaped pulse bias waveform to a substrate support, the substrate support including an electrostatic chuck, a chucking pole, a substrate support surface and an electrode separated from the substrate support surface by a layer of dielectric material. The systems and methods further include capturing a voltage representative of a voltage at a substrate positioned on the substrate support surface and iteratively adjusting the shaped pulse bias waveform based on the captured signal. In a plasma processing system a thickness and a composition of a layer of dielectric material separating the electrode and the substrate support surface can be selected such that a capacitance between the electrode and the substrate support surface is at least an order of magnitude greater than a capacitance between the substrate support surface and a plasma surface.


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