The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Feb. 13, 2023
Applicant:

Nuflare Technology, Inc., Yokohama, JP;

Inventors:

Haruyuki Nomura, Yokohama, JP;

Noriaki Nakayamada, Kamakura, JP;

Assignee:

NuFlare Technology, Inc., Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01J 37/147 (2006.01); H01J 37/302 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3174 (2013.01); H01J 37/1472 (2013.01); H01J 37/3026 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/31769 (2013.01); H01J 2237/31776 (2013.01);
Abstract

In a charged particle beam writing method according to an embodiment, a charged particle beam is deflected by a deflector, and a pattern is written by irradiating, with the charged particle beam, a substrate having a resist film formed thereon. The method includes irradiating a pattern region, in which a pattern is to be formed, with a beam at a first dose, irradiating at least part of a non-pattern region, in which a pattern is not to be formed, with the charged particle beam at a second dose, at which the resist film is not dissolved away, and determining the second dose based on the first dose and a charge amount of the resist film corresponding to a pattern density of the pattern region, wherein a charge amount difference between the pattern region and a non-dissolution irradiation region, which is irradiated at the second dose, is smaller than that obtained when the second dose is zero.


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