The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Nov. 24, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Georgios Vellianitis, Heverlee, BE;

Marcus Johannes Henricus Van Dal, Linden, BE;

Gerben Doornbos, Kessel-Lo, BE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/25 (2023.02); H10N 70/021 (2023.02); H10N 70/253 (2023.02); H10N 70/823 (2023.02); H10N 70/884 (2023.02);
Abstract

A semiconductor structure includes a substrate; a resistance variable layer disposed over the substrate; a gate structure disposed over the resistance variable layer; a dielectric layer disposed over the resistance variable layer and surrounding the gate structure; a first contact plug disposed over the resistance variable layer and extending through the dielectric layer; and a second contact plug disposed over the resistance variable layer and opposite to the first contact plug and extending through the dielectric layer, wherein the resistance variable layer is semiconductive and ferroelectric. A method of manufacturing a semiconductor structure is also disclosed.


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