The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Mar. 04, 2022
Intel Corporation, Santa Clara, CA (US);
Leonard P. Guler, Hillsboro, OR (US);
Mohammad Hasan, Aloha, OR (US);
Tahir Ghani, Portland, OR (US);
Charles H. Wallace, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques are provided herein to form semiconductor devices having different pitches, yet maintaining a substantially similar depth to the diffusion regions between the semiconductor regions. In an example, a row of semiconductor devices having semiconductor regions extending in a first direction can include some devices having a diffusion region with a first width in the first direction and some devices having a diffusion region with a second width in the first direction, where the second width is different from the first width. The depths of the diffusion regions having both the first and second widths may be substantially similar (e.g., within 2 nm or less of one another). In some examples, the bottom surface of at least one of the wider diffusion regions has a step profile.