The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 04, 2022
Synopsys, Inc., Sunnyvale, CA (US);
Xi-Wei Lin, Fremont, CA (US);
Victor Moroz, Saratoga, CA (US);
Zudian Qin, Cupertino, CA (US);
Plamen Asenov Asenov, Glasgow, GB;
Synopsys, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a multitude of GAAFETs on a silicon substrate includes forming alternating layers of Si nanosheets and SiGe alloys above the silicon substrate, depositing a layer of oxide buffer above the top layer of SiGe alloy, depositing a mask layer above the oxide buffer layer, patterning the mask and the oxide, and performing a RIE of the silicon nanosheet and SiGe alloy layers so as to form tapered pillars of silicon nanosheet and SiGe alloy layers. In each tapered pillar, a width of the first layer of silicon nanosheet that is closer to the substrate is greater than a width of the etched second layer of silicon nanosheet that is formed above the first layer of silicon nanosheet. The first, and second tapered silicon nanosheet layers in each pillar form channels of first and second GAAFETs.