The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
May. 12, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Sunil Kumar Singh, Mechanicville, NY (US);
Xuan Anh Tran, Boise, ID (US);
Eswar Ramanathan, Mechanicville, NY (US);
Suryanarayana Kalaga, Mechanicville, NY (US);
Craig M. Child, Gansevoort, NY (US);
Robert Fox, Greenfield Center, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10B 63/845 (2023.02); H10N 70/066 (2023.02); H10N 70/24 (2023.02); H10N 70/821 (2023.02); H10N 70/826 (2023.02); H10N 70/8418 (2023.02); H10N 70/883 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a vertical memory devices and methods of manufacture. The structure includes: a first bit cell with a first top electrode; a second bit cell with a second top electrode; and a common bottom electrode for both the first bit cell and the second bit cell.