The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jan. 08, 2024
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu, TW;

Han-Jong Chia, Hsinchu, TW;

Sheng-Chen Wang, Hsinchu, TW;

Feng-Cheng Yang, Zhudong Township, TW;

Yu-Ming Lin, Hsinchu, TW;

Chung-Te Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H01L 23/535 (2006.01); H10B 51/00 (2023.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H01L 23/535 (2013.01); H10B 51/00 (2023.02); H10B 51/10 (2023.02); H10B 51/30 (2023.02); H10D 64/252 (2025.01); H10D 64/258 (2025.01);
Abstract

In an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.


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