The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 19, 2021
Intel Corporation, Santa Clara, CA (US);
Prashant Majhi, San Jose, CA (US);
Anand Murthy, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Multi-plate MIM capacitors include a staircase structure, with steps including a high-k capacitor dielectric and one or more electrode plates. Contacts pass through insulator fill material and land on the electrode plate of a respective step. A recess passes through the staircase structure. In some examples, the recess is filled with insulator material, and steps of the staircase structure have a bilayer structure (e.g., lower layer of capacitor dielectric and upper layer of capacitor electrode plate). In other examples, the recess is filled with conductive material. In such cases, steps of the staircase structure have a multilayer structure that includes an upper portion and a lower portion. The lower portion includes insulator material and the upper portion includes a layer of capacitor dielectric between first and second capacitor electrode plates, with the second capacitor electrode plates being continuous with, or otherwise in contact with, the conductive material in the recess.