The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Mar. 02, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Tsung-Sheng Kang, Ballston Lake, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Leon Sigal, Monsey, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract
A structure including a plurality of nanosheet transistors each comprising a gate. A gate protrusion extends from the gate towards the backside of one of the plurality of electronic devices. A first dielectric liner is located flush against the sidewalls of the gate protrusion. A contact via connected to a backside surface of the gate protrusion. A second dielectric liner located flush again the sidewalls of the contact via.