The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 30, 2020
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventor:
Nobuyuki Terasaki, Saitama, JP;
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); B32B 7/12 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 15/20 (2006.01); B32B 37/18 (2006.01); C04B 37/02 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/46 (2006.01); H05K 1/03 (2006.01); H05K 3/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); B32B 7/12 (2013.01); B32B 9/005 (2013.01); B32B 9/041 (2013.01); B32B 15/20 (2013.01); B32B 37/18 (2013.01); C04B 37/023 (2013.01); H01L 21/4857 (2013.01); H05K 1/0306 (2013.01); H05K 3/381 (2013.01); H05K 3/382 (2013.01); H05K 3/388 (2013.01); B32B 2250/02 (2013.01); B32B 2255/205 (2013.01); B32B 2311/00 (2013.01); B32B 2311/12 (2013.01); B32B 2315/02 (2013.01); B32B 2457/08 (2013.01); C04B 2237/12 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01); H01L 23/46 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/10253 (2013.01); H05K 2203/06 (2013.01);
Abstract
A copper-ceramic bonded body includes a copper member made of copper or a copper alloy, and a ceramic member made of silicon nitride, the copper member and the ceramic member being bonded to each other, in which a maximum length of a Mg—N compound phase which is present at a bonded interface between the copper member and the ceramic member is less than 100 nm, and in a unit length along the bonded interface, the number density of the Mg—N compound phase in a range of a length of 10 nm or more and less than 100 nm is less than 8 pieces/μm.