The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Sep. 20, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sivakumar Dhandapani, San Jose, CA (US);

Jun Qian, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); B24B 37/005 (2012.01); B24B 37/20 (2012.01); B24B 37/32 (2012.01); H01L 21/321 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); B24B 37/005 (2013.01); B24B 37/20 (2013.01); B24B 37/32 (2013.01); H01L 21/3212 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01);
Abstract

A method of processing substrates includes: subjecting each respective first substrate of a first plurality of substrates to a process that modifies a thickness of an outer layer of the respective first substrate; generating a plurality of groups of process parameter values, wherein the plurality of process parameters comprise a plurality of control parameters and a plurality of state parameters; generating a plurality of measured removal profiles; generating a matrix that relates the plurality of process parameters to a calculated removal profile; for each respective second substrate of a second plurality of substrates, determining a target removal profile and a plurality of state parameter values; calculating respective control parameter values to apply to the respective second substrate by applying the target removal profile and the state parameter values to the matrix; and subjecting each respective second substrate to the process using the respective process parameter values.


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