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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12451364 B1

PDFFull Text
Date of Patent:
Oct. 21, 2025

Filed:

Apr. 26, 2022

Plasma processing method

Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Kenta Nakajima, Tokyo, JP;

Toru Ito, Tokyo, JP;

Fumiyoshi Ofuji, Tokyo, JP;

Assignee:

HITACHI HIGH-TECH CORPORATION, Tokyo, JP;

Attorney:

Miles & Stockbridge, P.C.

Primary Examiner:

Roberts P Culbert

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/32146 (2013.01); H01J 37/32174 (2013.01); H01L 21/02164 (2013.01); H01L 21/31116 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02); H10D 64/035 (2025.01); H10D 64/037 (2025.01); H10D 64/665 (2025.01); H10D 64/691 (2025.01); H01J 37/32311 (2013.01); H01J 2237/332 (2013.01); H01J 2237/3341 (2013.01); H01J 2237/3347 (2013.01);
Abstract

A plasma processing method for uniformly removing a processing target film in a lateral direction even when a depth of a trench is increased, in particular, a method for plasma-etching a tungsten film of a stacked film formed by alternately stacking an insulating film and the tungsten film. The method includes: a first depositing step of depositing a film; a first etching step of etching after the first depositing step; a second depositing step of depositing a film; a second etching step of etching using a mixed gas after the second depositing step; and a third etching step of etching after the second etching step, the second depositing step being performed after the first depositing step and the first etching step are repeated a predetermined number of times, and the second depositing step, the second etching step, and the third etching step are repeated a predetermined number of times.

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