The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Dec. 16, 2021
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Liyang Zhang, Suzhou, CN;

Kai Cheng, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); C23C 16/303 (2013.01); C30B 25/02 (2013.01); C30B 29/406 (2013.01); H01L 21/0243 (2013.01); H01L 21/02614 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02499 (2013.01); H01L 21/0254 (2013.01);
Abstract

Disclosed is a method for preparing a substrate relate to the field of semiconductors. The method comprises the following steps: S, providing a reaction container in which a base substrate is mounted; S, conducting a metal source into the reaction container, and forming a thin film layer on a surface of the base substrate, wherein a part of a surface of the base substrate is covered by the thin film layer, so that the base substrate is provided with an exposed surface that is not covered by the thin film layer; and S, conducting a corrosive gas into the reaction container to form one or more recessed holes in at least a part of the exposed surface.


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