The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Mar. 22, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Wangyu Lim, Hwaseong-si, KR;

Heesung Kang, Anyang-si, KR;

Jaeok Ko, Seoul, KR;

Jaebin Ahn, Suwon-si, KR;

Sunja Kim, Hwaseong-si, KR;

Youngjae Kim, Cheonan-si, KR;

Donghyun Ko, Hwaseong-si, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02312 (2013.01); H01L 21/764 (2013.01);
Abstract

A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlayer insulating layer on the first protrusion and the second protrusion, wherein the interlayer insulating layer is selectively formed in an upper space between the first protrusion and the second protrusion by the deposition inhibitor sites and the film-forming layer, and thus an air gap is formed between the first protrusion and the second protrusion.


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