The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jul. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shang-Hsuan Chiu, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Hui-Zhong Zhuang, Kaohsiung, TW;
Chi-Yu Lu, New Taipei, TW;
Jerry Chang Jui Kao, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Metallization structure for an integrated circuit. In one embodiment, an integrated circuit includes a metal-to-diffusion (MD) layer disposed over an active region of a cell, gates disposed over the active region of the cell, and a first metallization layer including M0 tracks disposed over the MD layer and the gates. The integrated circuit further includes a second metallization layer including M1 tracks disposed over the first metallization layer. The M1 tracks include first M1 tracks each having a first predetermined distance from an edge of the cell and second M1 tracks each having a second predetermined distance from the edge of the cell, wherein the first M1 tracks are longer than the second M1 tracks.