The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Apr. 18, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/024 (2025.01); H10D 30/025 (2025.01); H10D 30/6215 (2025.01); H10D 30/63 (2025.01); H10D 84/0158 (2025.01);
Abstract
A method, apparatus, and manufacturing system are disclosed herein for a vertical field effect transistor patterned in a self-aligned process. A plurality of fins is formed. A gate structure is formed on at least a first side and a second side of a lower portion of each fin. A spacer is formed on at least a first side and a second side of an upper portion of each fin. At least one layer is formed above the substrate and between the fins. An opening is formed in the at least one layer between the fins by an etching process. The spacer protects the gate structure during the etching process.