The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Mar. 17, 2023
Niko Semiconductor Co., Ltd., New Taipei, TW;
Super Group Semiconductor Co., Ltd., Hsinchu County, TW;
Sung-Nien Tang, Hsinchu County, TW;
Ho-Tai Chen, Hsinchu County, TW;
Hsiu-Wen Hsu, Hsinchu County, TW;
NIKO SEMICONDUCTOR CO., LTD., New Taipei, TW;
SUPER GROUP SEMICONDUCTOR CO., LTD., Hsinchu County, TW;
Abstract
A power device and a method for manufacturing the power device are provided. The power device includes an electrical substrate, an epitaxial compound layer, a plurality of gates, a passivation layer, an electrically conductive body, a drain, and a field plate. The electrical substrate has a first surface, an epitaxial drift layer, and a plurality of doping regions. The doping regions are located below the first surface. The epitaxial compound layer is located on the electrical substrate. The gates are located on the epitaxial compound layer. The passivation layer covers the gates and the epitaxial compound layer. The electrically conductive body penetrates the passivation layer and the epitaxial compound layer and extends to the first surface. The drain penetrates the passivation layer and extends to the epitaxial layer. The field plate is located on the passivation layer, shields the gates, and connects to the electrically conductive body.