The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 11, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Moshe Dolejsi, Portland, OR (US);

Travis W. Lajoie, Forest Grove, OR (US);

Abhishek Anil Sharma, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H10B 12/30 (2023.02);
Abstract

An integrated circuit includes a first conductive structure, a second conductive structure, and a first spacer and a second spacer each comprising a first dielectric material. The integrated circuit further includes a layer comprising a second dielectric material that is compositionally different from the first dielectric material. The integrated circuit further includes a first interconnect feature above and at least partially landed on the first conductive structure. In an example, the first interconnect feature is laterally between the first spacer and the second spacer. The integrated circuit further includes a second interconnect feature above and at least partially landed on the second conductive structure. In an example, the second interconnect feature is laterally between the second spacer and the layer comprising the second dielectric material.


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