The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

May. 22, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Hung Liao, Hsinchu, TW;

Po-Ming Shih, Sanchong, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/22 (2012.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70916 (2013.01); G03F 1/22 (2013.01); G03F 7/70033 (2013.01); G03F 7/70525 (2013.01); G03F 7/70533 (2013.01);
Abstract

An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.


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