The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Jun. 13, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hong-Shyang Wu, Taipei, TW;

Kuo-Ming Wu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 10/60 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/60 (2025.01);
U.S. Cl.
CPC ...
H10D 10/60 (2025.01); H10D 62/133 (2025.01); H10D 62/137 (2025.01); H10D 62/177 (2025.01); H10D 64/231 (2025.01); H10D 64/281 (2025.01); H10D 84/645 (2025.01);
Abstract

A device and methods of forming the same are described. The device includes a substrate and a first bipolar junction transistor (BJT) disposed over the substrate. The first BJT includes a first base region, a first emitter region, and a first collector region. The device further includes a second BJT disposed over the substrate adjacent the first BJT, and the second BJT includes a second base region, a second emitter region, and a second collector region. The device further includes an interconnect structure disposed over the first and second BJTs, and the interconnect structure includes a first conductive line electrically connected to the first emitter region and the second base region and a second conductive line electrically connected to the first collector region and the second collector region.


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