The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Aug. 09, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Nicholas Anthony Lanzillo, Wynantskill, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Brent A. Anderson, Jericho, VT (US);
Michael Rizzolo, Delmar, NY (US);
Lawrence A. Clevenger, Saratoga Springs, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A back side contact structure is provided that directly connects a first electrode of a MRAM, which is present in a back side of a wafer, to a source/drain structure of a transistor. The back side contact is self-aligned to the source/drain structure of the transistor as well as to the first electrode of the MRAM. The close proximity between the MRAM and the source/drain structure increases the speed of the device. MRAM yield is not compromised since no re-sputtering of back side contact metal onto the MRAM occurs.