The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Feb. 14, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Zachary J. Devereaux, Webberville, MI (US);
Bhaskar Jyoti Bhuyan, Santa Clara, CA (US);
Thomas Joseph Knisley, Livonia, MI (US);
Zeqing Shen, San Jose, CA (US);
Susmit Singha Roy, Campbell, CA (US);
Mark J. Saly, Santa Clara, CA (US);
Abhijit Basu Mallick, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.