The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Mar. 30, 2022
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Punyashloka Debashis, Hillsboro, OR (US);
Hai Li, Portland, OR (US);
Chia-Ching Lin, Portland, OR (US);
Dmitri Evgenievich Nikonov, Beaverton, OR (US);
Ian Alexander Young, Olympia, WA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/85 (2023.01); H03K 19/18 (2006.01); H10B 61/00 (2023.01); H10N 50/20 (2023.01); H10N 50/80 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01); H10N 59/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/85 (2023.02); H10B 61/22 (2023.02); H10N 50/20 (2023.02); H10N 50/80 (2023.02); H10N 52/01 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02); H10N 59/00 (2023.02); H03K 19/18 (2013.01);
Abstract
In one embodiment, an integrated circuit die includes: a first layer comprising a magnetoelectric material; a second layer comprising a monolayer transition metal dichalcogenide (TMD); a magnet between the first layer and the second layer, wherein the magnet has perpendicular magnetic anisotropy; a first conductive trace coupled to the first layer; and a second conductive trace coupled to the magnet.