The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jul. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes forming a first fin and a second fin over a substrate, depositing an isolation material surrounding the first and second fins, forming a gate structure along sidewalls and over upper surfaces of the first and second fins, recessing the first and second fins outside of the gate structure to form a first recess in the first fin and a second recess in the second fin, epitaxially growing a first source/drain material protruding from the first and second recesses, and epitaxially growing a second source/drain material on the first source/drain material, wherein the second source/drain material grows at a slower rate on outermost surfaces of opposite ends of the first source/drain material than on surfaces of the first source/drain material between the opposite ends of the first source/drain material, and wherein the second source/drain material has a higher doping concentration than the first source/drain material.