The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Apr. 29, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jun Liu, Wuhan, CN;
Weihua Chen, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including first bonding contacts and a first dielectric layer isolating the first bonding contacts. The semiconductor device also includes a second semiconductor structure including an array of dynamic random-access memory (DRAM) cells and a second bonding layer including second bonding contacts and a second dielectric layer isolating the second bonding contacts. The first bonding layer is bonded to the second bonding layer. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure.