The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jul. 11, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Fu-Chiang Kuo, Hsinchu, TW;

Jen-Yuan Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/642 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 25/0652 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A semiconductor structure comprises a semiconductor substrate, a first trench capacitor, and a second trench capacitor. The substrate has first trenches arranged in a first arrangement direction with each first trench extending in a first extension direction and second trenches arranged in a second arrangement direction with each second trench extending in a second extension direction. The first trench capacitor includes first capacitor segments disposed inside the first trenches. The second trench capacitor includes second capacitor segments disposed inside the second trenches. One first capacitor segment of the first capacitor segments has an extending length different from that of another first capacitor segment of the first capacitor segments, and one second capacitor segment of the second capacitor segments has an extending length different from that of another second capacitor segment of the second capacitor segments.


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