The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jan. 10, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Deyuan Xiao, Hefei, CN;

Guangsu Shao, Hefei, CN;

Weiping Bai, Hefei, CN;

Yunsong Qiu, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/33 (2023.02); H10B 12/036 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor structure, a method for manufacturing a semiconductor structure, and a memory are provided. The semiconductor structure includes a substrate, a plurality of active pillars arranged above the substrate, a storage structure, and a plurality of transistors. The active pillars are arranged in an array in a first direction and in a second direction. Each active pillar includes a first sub active pillar and a second sub active pillar arranged on the first sub active pillar. The first direction and the second direction intersect with each other and are both parallel to a top surface of the substrate. A material of the first sub active pillar includes a first element, and resistivity of the first sub active pillar including the first element is less than resistivity of the first sub active pillar absence of the first element. The storage structure covers a sidewall of the first sub active pillar.


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