The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Sep. 20, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure, a method for manufacturing the same and a memory are provided. The semiconductor structure includes a substrate, multiple semiconductor pillars, memory structures, and multiple transistors. The multiple semiconductor pillars are arrayed along a first direction and a second direction. Each semiconductor pillar includes a first portion and a second portion on the first portion. The memory structure includes a first electrode layer, a dielectric layer and a second electrode layer. The first electrode layers cover sidewalls of the first portions and are located in first filling regions arranged at intervals. Each first filling region surrounds a sidewall of the first portion. The dielectric layers cover at least surfaces of the first electrode layers. The second electrode layers cover surfaces of the dielectric layers. Channel structures of the transistors are located in the second portions, and extend in a same direction as the second portions.