The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Sep. 07, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Deyuan Xiao, Hefei, CN;

Xingsong Su, Hefei, CN;

Guangsu Shao, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/33 (2023.02); H10B 12/036 (2023.02); H10B 12/05 (2023.02);
Abstract

Disclosed in the embodiments of the present disclosure are a semiconductor structure and method for manufacturing same, and a memory. The semiconductor structure includes: a plurality of first active columns arranged in an array along a first direction and a second direction, a plurality of first electrodes located in first grooves arranged at intervals, a plurality of first dielectric layers, and a second electrode covering surfaces of the first dielectric layers. The first direction and the second direction are perpendicular to the extension direction of the first active column, and the first direction is intersected with the second direction. Each first electrode covers a side wall of one of the first active columns. Each first groove surrounds a surface of each first active column. Each first dielectric layer covers the side wall of one of the first electrodes and a bottom of a gap between two adjacent first electrodes.


Find Patent Forward Citations

Loading…