The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Aug. 16, 2022
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

Taekeun Lee, Incheon, KR;

Hyunil Bae, Chungcheongnam-do, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/13 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/165 (2013.01); H01L 21/4853 (2013.01); H01L 23/13 (2013.01); H01L 23/3675 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/552 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/48 (2013.01); H01L 25/0657 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/1601 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16265 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32265 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/1616 (2013.01); H01L 2924/16235 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device has a semiconductor die, substrate, and plurality of first conductive pillars formed over the semiconductor die or substrate. Alternatively, the first conductive pillars formed over the semiconductor die and substrate. An electrical component is disposed over the semiconductor die. The electrical component can be a double-sided IPD. The semiconductor die and electrical component are disposed over the substrate. A shielding frame is disposed over the semiconductor die. A plurality of second conductive pillars is formed over a first surface of the electrical component. A plurality of third conductive pillars is formed over a second surface of the electrical component opposite the first surface of the electrical component. A bump cap can be formed over a distal end of the conductive pillars. The substrate has a cavity and the electrical component is disposed within the cavity. An underfill material is deposited between the semiconductor die and substrate.


Find Patent Forward Citations

Loading…