The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Mar. 24, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Kun Zhang, Hubei, CN;
Wenxi Zhou, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes forming an alternating dielectric stack on a substrate, wherein the alternating dielectric stack includes a plurality of dielectric layer pairs, each dielectric layer pair comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer. The method also includes forming a staircase structure in the alternating dielectric stack and disposing an insulating layer on the staircase structure and the alternating dielectric stack. The method further includes forming an embedded hard mask on the insulating layer, wherein the embedded hard mask includes two or more sets of patterns configured to form two or more sets of vertical structures that are fabricated sequentially. The two or more sets of patterns are embedded in the 3D memory device.