The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Aug. 01, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Fu-Chiang Kuo, Hsinchu, TW;

Yu-Hsin Fang, Hsinchu, TW;

Min-Hsiung Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, at least one active deep trench capacitor (DTC), the at least one active DTC including a plurality of conductive layers and an insulating layer disposed between adjacent conductive layers of the plurality of conductive layers. The semiconductor device includes a plurality of dummy DTCs disposed on opposing sides of the at least one active DTC, the plurality of dummy DTCs and the at least one active DTC arranged in a row. The semiconductor device includes a plurality of conductive structures connected to the plurality of conductive layers of the active DTC, the plurality of dummy DTCs insulated from the at least one active DTC.


Find Patent Forward Citations

Loading…