The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Apr. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Pei-Lum Ma, Taipei, TW;

Kun Da Jhong, Tainan, TW;

Hsueh-Han Lu, Tainan, TW;

Kun-Ei Chen, Tainan County, TW;

Chen-Chieh Chiang, Kaohsiung, TW;

Ling-Sung Wang, Tainan, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/00 (2006.01); H10D 1/20 (2025.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H10D 1/20 (2025.01); H01L 2224/0235 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0363 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0392 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05013 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06515 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a first conductive pad, a second conductive pad, a conductive material and a conductive coil. The first and second conductive pads are disposed over and electrically connected to the interconnection structure individually. The conductive material is electrically isolated from the interconnection structure, wherein bottom surfaces of the conductive material, the first conductive pad and the second conductive pad are substantially aligned. The conductive coil is disposed in the interconnection structure and overlapped by the conductive material. A manufacturing method of a semiconductor structure is also provided.


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