The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 24, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a process method for improving reliability of a metal gate high-voltage device. Stacks layers formed over the gate oxide layer and spaced apart from each other. An SiCN layer is deposited to cover tops and sidewalls of the stack layers, and cover bottoms of slots between the stack layers. An HARP layer is deposited to covert the SiCN layer. The HARP layer over the stack layers and the slot regions is covered with a photoresist. Photolithography and etching are sequentially performed to open the HARP layer over the stack layers. The photoresist in the slot regions is reserved. The HARP layer over the stack layers outside the slot regions is removed. The operations are repeated for many times until the slot regions are filled with the HARP layer.