The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jul. 24, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Te-Hsien Hsieh, Kaohsiung, TW;
Lee-Chuan Tseng, New Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); C23C 14/02 (2006.01); C23C 14/46 (2006.01); C23C 14/58 (2006.01); C23C 16/02 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/687 (2006.01); C23C 14/56 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32633 (2013.01); C23C 14/022 (2013.01); C23C 14/46 (2013.01); C23C 14/5873 (2013.01); C23C 16/0245 (2013.01); H01J 37/32422 (2013.01); H01J 37/32431 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32871 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/68785 (2013.01); C23C 14/564 (2013.01); C23C 16/4412 (2013.01); H01J 2237/022 (2013.01); H01J 2237/334 (2013.01);
Abstract
In some embodiments, the present disclosure relates to a method of performing an etching process. The method includes generating a plasma within a plasma chamber in communication with a processing chamber. Ions from the plasma are accelerated toward a workpiece within the processing chamber to generate an ion beam. The ion beam performs an etching process that etches a material on the workpiece. A by-product from the etching process is moved to directly below one or more baffles within the processing chamber.