The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jan. 23, 2024
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Yatir Linden, Zichron Ya'akov, IL;

Nadav Gutman, Zichron Ya'aqov, IL;

Boaz Ophir, Milpitas, CA (US);

Mark Ghinovker, Yoqneam Ilit, IL;

Assignee:

KLA Con, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/00 (2017.01); G06T 7/73 (2017.01);
U.S. Cl.
CPC ...
G06T 7/001 (2013.01); G06T 7/73 (2017.01); G06T 2207/30144 (2013.01);
Abstract

A metrology system may receive one or more first images of an overlay target on a sample from a first detector, where the overlay target includes one or more Moiré structures, which may be formed as first-layer features and second-layer features that at least partially overlap and have different pitches. In the first images, the first-layer features and the second-layer features may be unresolved, but a Moiré pitch may be resolved. The system may further receive one or more second images of the overlay target from a second detector, where at least one of the first-layer features or the second-layer features are resolved in the one or more second images. The controller may generate a metrology measurement based on the one or more first images and generate a measurement of a systematic error associated with the metrology measurement based on the one or more second images.


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