The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
May. 03, 2024
Egtm Co., Ltd., Suwon-si, KR;
Ju Hwan Jeong, Suwon-si, KR;
Hyeon Sik Cho, Suwon-si, KR;
Han Bin Lee, Suwon-si, KR;
Sun Young Baik, Suwon-si, KR;
Woong Jin Choi, Suwon-si, KR;
Ha Na Kim, Suwon-si, KR;
Myeong Il Kim, Suwon-si, KR;
Kyu Ho Cho, Suwon-si, KR;
EGTM Co., Ltd., Suwon-si, KR;
Abstract
Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below: