The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Aug. 09, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Robert D. Clark, Fremont, CA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H10D 62/10 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/0228 (2013.01); H01L 21/2254 (2013.01); H01L 21/324 (2013.01); H10D 62/119 (2025.01); H10D 64/62 (2025.01);
Abstract
A method of processing a substrate that includes: loading the substrate in a processing chamber, the substrate including a raised feature of a semiconductor; forming a conformal dopant layer on the raised feature by atomic layer deposition (ALD); forming a metal layer over the raised feature; thermally treating the dopant layer to form an ultra-shallow dopant region in the raised feature by diffusion of a dopant from the dopant layer into the raised feature; and thermally treating the metal layer to form an ohmic contact region in the raised feature by diffusion of a metal from the metal layer into the raised feature.