The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Aug. 02, 2024
Applied Materials, Inc., Santa Clara, CA (US);
Peijiao Fang, Santa Clara, CA (US);
Chengyu Liu, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the disclosure describe a method including sputtering material from a physical vapor deposition (PVD) target disposed within a processing chamber. The sputtered material is filtered by an electrode. Filtering the sputtered material causes a first portion of the sputtered material to pass through apertures formed in the electrode and towards a substrate disposed on a substrate support. The first portion of the sputtered material is deposited on a surface of the substrate. Depositing the first portion of the sputtered material includes delivering a pulsed voltage (PV) waveform to an additional electrode that is disposed within the substrate support. The substrate support is disposed within the processing chamber. The PV waveform is configured to apply a pulsed DC bias to the additional electrode. The application of the pulsed DC bias includes forming an etch-to-deposition ratio greater than or equal to 0.5.