The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Jun. 04, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsin-Wen Su, Hsinchu, TW;
Jui-Lin Chen, Taipei, TW;
Shih-Hao Lin, Hsinchu, TW;
Chih-Chuan Yang, Hsinchu, TW;
Ming-Yen Chuang, Hsinchu, TW;
Chenchen Jacob Wang, Hsinchu, TW;
Ping-Wei Wang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Some embodiments relate to a memory device. The memory device includes a transistor having a first source/drain (S/D) region and a second S/D region, a first S/D contact disposed over the first S/D region, the first S/D contact extending lengthwise in a first direction, a second S/D contact disposed over the second S/D region, a first via landing on the first S/D contact, the first via extending lengthwise in a second direction different from the first direction, a second via landing on the second S/D contact, the first via having a length measured in the second direction that is larger than the second via, a first conductive line coupled to the first via, a second conductive line coupled to the second via, and a memory structure disposed above the transistor and coupled to the second conductive line.