The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Sep. 22, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Semyeong Jang, Hefei, CN;

Joonsuk Moon, Hefei, CN;

Deyuan Xiao, Hefei, CN;

Jo-Lan Chin, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/63 (2025.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor structure and a method for manufacturing a semiconductor structure are provided, which relate to the technical field of semiconductors. The semiconductor structure includes a substrate and a plurality of first conductive layers. The substrate includes a plurality of first trenches extending in a first direction and a plurality of second trenches extending in a second direction. A plurality of active pillars are provided between the plurality of first trenches and the plurality of second trenches. The first direction intersects with the second direction. Each of the plurality of first conductive layers is arranged on each of sidewalls, which are arrayed in the first direction, of a respective one of the plurality of active pillars.


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