The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

May. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Yu Lu, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Chia-Tien Wu, Hsinchu, TW;

Chih-Yu Lai, Hsinchu, TW;

Shang-Hsuan Chiu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G06F 30/392 (2020.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/82 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); G06F 30/392 (2020.01); H01L 21/76897 (2013.01); H10D 84/0123 (2025.01); H10D 84/038 (2025.01); H10D 84/82 (2025.01); H01L 23/5226 (2013.01);
Abstract

An integrated circuit (IC) structure includes two active areas extending in a first direction, two gate structures extending in a second direction, a first metal segment extending in the second direction in a first metal layer, second and third metal segments extending in the first direction in a second metal layer, and a gate via structure extending from the third metal segment to one of the gate structures. The gate structures overlie the active areas, the first metal segment overlies each of the active areas between the gate structures, the second metal segment overlies a first active area and overlies and is electrically connected to the first metal segment, and the first and second metal segments are electrically connected to the second active area, isolated from the first active area between the gate structures, and connected to the first active area outside the gate structures.


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