The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Apr. 28, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chen-Te Chu, Hsinchu, TW;
Yuan-Yang Hsiao, Hsinchu, TW;
Chih-Pin Chiu, Hsinchu, TW;
Ying-Yao Lai, Hsinchu, TW;
Mao-Nan Wang, Hsinchu, TW;
Chen-Chiu Huang, Hsinchu, TW;
Dian-Hau Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01);
Abstract
A semiconductor packaging structure includes a first passivation layer, a capacitor structure, and a second passivation layer. The capacitor structure is disposed on the first passivation layer. The second passivation layer is disposed on the capacitor structure opposite to the first passivation layer. The second passivation layer has a compressive stress that is smaller than −0.3 GPa.